Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric
نویسندگان
چکیده
منابع مشابه
Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.
Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by curre...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2020
ISSN: 2168-6734
DOI: 10.1109/jeds.2020.2974260